Ultra-low-power transistors could function for years without a battery

Abstract of Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

“If we were to draw energy from a typical AA battery based on this design, it would last for a billion years." --- Sungsik Lee, PhD, in the journal Science

Schematic cross-section of an Indium-gallium-zinc-oxide (IGZO) thin-film transistor
[inset: schematic illustrations of atomic structures for less compensated (left)
and more compensated (right) IGZO films, respectively]
(credit: Sungsik Lee and Arokia Nathan/Science)


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